Journal: Sensors (Basel, Switzerland)

Article Title: Multiscale Design and Simulation of CdSe/ZnS/MoTe 2 Hybrid Photodetectors

doi: 10.3390/s26082516

Figure Lengend Snippet: The COMSOL Multiphysics simulation output of the optical and electronic properties of the SiO 2 /MoTe 2 /CdSe/ZnS heterostructure. ( a – c ) The absorption spectrum of MoTe 2 , SiO 2 , and CdSe/ZnS QDs. ( d ) The multilayer geometry visualized using a COMSOL-based simulation. ( e ) Absorption, ( f ) transmission, and ( g ) reflection spectra of the complete SiO 2 /MoTe 2 /CdSe/ZnS. ( h ) Energy band diagram of the heterostructure that shows the alignment of type-I bands between the layers of MoTe 2 and CdSe/ZnS and provides the possibility of carrier confinement and separation of charges. From left to right, the energy band diagram corresponds to SiO 2 MoTe 2 /CdSe/ZnS. SiO 2 acts as the insulating substrate, MoTe 2 is the active layer, and CdSe/ZnS represents the core–shell quantum dots.

Article Snippet: In this work, we report a detailed theoretical study of a CdSe/ZnS QDs-sensitized MoTe 2 photodetector by combining optical simulations, density functional theory (DFT) calculations, and Silvaco technology computer-aided design (TCAD) device modeling.

Techniques: Transmission Assay

Journal: Sensors (Basel, Switzerland)

Article Title: Multiscale Design and Simulation of CdSe/ZnS/MoTe 2 Hybrid Photodetectors

doi: 10.3390/s26082516

Figure Lengend Snippet: Simulated electrical characteristics of MoTe 2 -based photodetectors with and without CdSe/ZnS QDs when exposed to 520 nm illumination. ( a ) The output curve of the MoTe 2 -based photodetector without QDs shows its response to dark conditions and power density from 11.3 to 171.3 mW/cm 2 at a 520 nm wavelength. ( b ) Output curves of the MoTe 2 -based photodetector with QDs under dark conditions and illumination power densities from 11.3 mW/cm 2 to 171.3 mW/cm 2 at a 520 nm wavelength. ( c ) Transfer curves of the MoTe 2 -based photodetector without QDs under dark and an illuminated power density of 171.3 mW/cm 2 at 520 nm (V d = 1 V). ( d ) Transfer curves of the MoTe 2 -based photodetector with QDs under dark and an illuminated power density of 171.3 mW/cm 2 at 520 nm (V d = 1 V).

Article Snippet: In this work, we report a detailed theoretical study of a CdSe/ZnS QDs-sensitized MoTe 2 photodetector by combining optical simulations, density functional theory (DFT) calculations, and Silvaco technology computer-aided design (TCAD) device modeling.

Techniques:

Journal: Sensors (Basel, Switzerland)

Article Title: Multiscale Design and Simulation of CdSe/ZnS/MoTe 2 Hybrid Photodetectors

doi: 10.3390/s26082516

Figure Lengend Snippet: ( a ) Energy band diagram of the CdSe/ZnS/MoTe 2 -based photodetector , The blue lines in the figure represent the edge positions of MoS 2 , and the orange lines represent the edge positions of QDs. ( b ) Schematic of the complete device.

Article Snippet: In this work, we report a detailed theoretical study of a CdSe/ZnS QDs-sensitized MoTe 2 photodetector by combining optical simulations, density functional theory (DFT) calculations, and Silvaco technology computer-aided design (TCAD) device modeling.

Techniques:

Journal: Sensors (Basel, Switzerland)

Article Title: Multiscale Design and Simulation of CdSe/ZnS/MoTe 2 Hybrid Photodetectors

doi: 10.3390/s26082516

Figure Lengend Snippet: Simulated photoresponses of MoTe 2 and CdSe/ZnS/MoTe 2 heterostructure-based devices. ( a ) Time-dependent photoresponses of MoTe 2 and CdSe/ZnS/MoTe 2 under V d = +1 V and V g = 0 V, under 520 nm light illumination using an optical power density of 171.3 mW/cm 2 . ( b ) Time-dependent photoresponses of MoTe 2 and CdSe/ZnS/MoTe 2 at V d = +1 V and V g = 0 V, under 630 nm light illumination using the same power density. ( c , d ) Rise and decay times with QDs at 520 nm and 630 nm, the dashed line in the figure is used to determine the rise and decay time.

Article Snippet: In this work, we report a detailed theoretical study of a CdSe/ZnS QDs-sensitized MoTe 2 photodetector by combining optical simulations, density functional theory (DFT) calculations, and Silvaco technology computer-aided design (TCAD) device modeling.

Techniques: